NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

Product Overview

NEC

NESG2101M05 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR by NEC - Datasheet Preview — Datasheet preview – NESG2101M05

Datasheet Details

Part number	NESG2101M05
Manufacturer	NEC
File Size	172.23 KB
Description	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
Datasheet	NESG2101M05 Datasheet
Additional preview pages of the NESG2101M05 datasheet.

NESG2101M05 Product details

Description

NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators NEC s low proﬁle, ﬂat lead style M05 Package provides high frequency performance for c

Features

HIGH.

📁 Similar Datasheet

NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2107M33 - NECs NPN SILICON TRANSISTOR (California Eastern Labs)
NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2021M05 - NPN SiGe RF Transistor (Renesas)
NESG2021M16 - HIGH FREQUENCY TRANSISTOR (CEL)
NESG2030M04 - SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2031M16 - HIGH FREQUENCY TRANSISTOR (CEL)
NESG204619 - NPN SiGe TRANSISTOR (CEL)
NESG250134 - NECs NPN SiGe RF TRANSISTOR (California Eastern Labs)

Other Datasheets by NEC

NESG210719 - NECs NPN SiGe TRANSISTOR
NESG210833 - NPN SiGe RF TRANSISTOR
NESG2030M04 - NONLINEAR MODEL
NESG2046M33 - NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
NESG3031M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NES1821B-30 - 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NES1823P-100 - 100W L-BAND PUSH-PULL POWER GaAs MESFET
NES1823P-140 - 140 W L / S-BAND PUSH-PULL POWER GaAs MES FET

Published: May 7, 2005 |