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NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

General Description

NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NEC s low profile, flat lead style M05 Package provides high frequency performance for c

Key Features

  • HIGH.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • • • • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs.