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NESG2101M05 Datasheet Necs NPN Sige High Frequency Tran Sis Tor

Manufacturer: NEC (now Renesas Electronics)

Overview: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR.

General Description

NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NEC s low profile, flat lead style M05 Package provides high frequency performance for pact wireless designs.

ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga RF NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M05 M05 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 17 0.4 0.5 100 100 260 1.2 MAX PARAMETERS AND CONDITIONS Output Power at 1 dB pression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 50 mA, f = 2 GHz Gain Bandwidth Product at VCE = 3 V, IC = 50 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 MHz Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain3 at VCE = 2 V, IC = 15 mA 1.

MSG = S21 S12 2.

Key Features

  • HIGH.

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