NESG2101M05 Description
NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NEC s low profile, flat lead style M05 Package provides high frequency performance for pact wireless designs. (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga RF NF Ga MSG |S21E| fT Cre ICBO DC...
NESG2101M05 Key Features
- HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (