NESG3031M05 Description
PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR.
NESG3031M05 Key Features
- MAXIMUM STABLE POWER GAIN: MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz SiGe HBT TECHNOLOGY: USH3 process, fma
- 8 mm wide embossed taping
- Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape