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NESG3031M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

Key Features

  • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz.

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PRELIMINARY DATA SHEET NEC's NPN SiGe NESG3031M05 HIGH FREQUENCY TRANSISTOR FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • • • MAXIMUM STABLE POWER GAIN: MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz SiGe HBT TECHNOLOGY: USH3 process, fmax = 110 GHz M05 PACKAGE: Flat-lead 4 pin thin-type super minimold package ORDERING INFORMATION PART NUMBER NESG3031M05 NESG3031M05-T1 QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs.