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NP160N04TDG - SWITCHING N-CHANNEL POWER MOS FET

General Description

The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

PACKAGE TO-263-7pin (MP-25ZT) typ.

Key Features

  • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A).
  • High Current Rating ID(DC) = ±160 A.
  • Logic level drive type (TO-263-7pin).

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Full PDF Text Transcription for NP160N04TDG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP160N04TDG. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transis...

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FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY NP160N04TDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode). FEATURES • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.

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