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UPA2717GR Datasheet

Manufacturer: NEC (now Renesas Electronics)

UPA2717GR datasheet preview

Datasheet Details

Part number	UPA2717GR
Datasheet	UPA2717GR_NEC.pdf
File Size	144.29 KB
Manufacturer	NEC (now Renesas Electronics)
Description	SWITCHING N- AND P-CHANNEL POWER MOS FET

UPA2717GR Overview

The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook puters and Li-ion battery protection circuit.

UPA2717GR Key Features

Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = -10 V, ID = -7.5 A) RDS(on)2 = 8.9 mΩ MAX. (VGS = -4.5 V, ID = -7.
Low Ciss: Ciss = 3550 pF TYP
Built-in gate protection diode
Small and surface mount package (Power SOP8)

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