UPA2717GR Overview
Description
The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain.
Key Features
- Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = –10 V, ID = –7.5 A) RDS(on)2 = 8.9 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A)
- Low Ciss: Ciss = 3550 pF TYP
- Built-in gate protection diode
