UPA2719GR Overview
Description
The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
Key Features
- Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = -10 V, ID = -5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = -4.5 V, ID = -5.0 A)
- Low Ciss: Ciss = 2010 pF TYP
- Built-in gate protection diode
