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UPA2719GR Datasheet

Manufacturer: NEC (now Renesas Electronics)

UPA2719GR datasheet preview

Datasheet Details

Part number	UPA2719GR
Datasheet	UPA2719GR_NEC.pdf
File Size	140.69 KB
Manufacturer	NEC (now Renesas Electronics)
Description	SWITCHING N- AND P-CHANNEL POWER MOS FET

UPA2719GR Overview

The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook puters and Li-ion battery protection circuit.

UPA2719GR Key Features

Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = -10 V, ID = -5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = -4.5 V, ID = -5.
Low Ciss: Ciss = 2010 pF TYP
Built-in gate protection diode
Small and surface mount package (Power SOP8)

UPA2719AGR from other manufacturers

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Brand Logo	Part Number	Description	Other Manufacturers
	UPA2719AGR	P-CHANNEL POWER MOS FET	Renesas

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