Click to expand full text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2719GR
SWITCHING P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain
DESCRIPTION
The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
FEATURES
• Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A) • Low Ciss: Ciss = 2010 pF TYP. • Built-in gate protection diode • Small and surface mount package (Power SOP8)
6.0 ±0.3 4.4
+0.10 –0.05
1
1.44
4 5.37 MAX.
0.8
1.8 MAX.
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.
UPA2719GR Datasheet
