UPA2719GR Description
The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook puters and Li-ion battery protection circuit.
UPA2719GR Key Features
- Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = -10 V, ID = -5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = -4.5 V, ID = -5.
- Low Ciss: Ciss = 2010 pF TYP
- Built-in gate protection diode
- Small and surface mount package (Power SOP8)