NTE2388 Datasheet | NTE Electronics

Description : The NTE2388 is an N- Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features : D Silicon Gate for Fast Switching Speeds D Low r DS(on) to Minimize On- Losses. Specified at Elevated Temperatures. D Rugged - SOA is Power Dissipation Limited D Source- to- Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain- Source Voltage, VDSS - - - - - - - - - - - . 200V Drain- Gate Voltage (RGS = 20kΩ), VDGR - - - - - - - - - 200V Gate- Source Voltage, VGS - - - - - - - - - - - . . ±20V Drain Current, ID Continuous TC = +25°C - - - - - - - - - - - - . . . 18A TC = +100°C - - - - - - - - - - - - . . 11A Peak TC = +25°C - - - - - - - - - - - - . . . 72A Total Power Dissipation (TC = +25°C), PD -...