Click to expand full text
NTE2992 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
Features: D 4V Gate Drive D Low Drain−Source On−Resistance D High Forward Transfer Admittance D Low Leakage Current
D
Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier
G S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .