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NTE2993 - N-Channel MOSFET

Features

  • D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling G S Absolute Maximum Ratings: Drain.
  • Source Voltage (VGS = 0V, ID = 1mA), VDSS.
  • . . 400V Gate.
  • Source Voltage, VGS.
  • . . 20V Continuous TTCC = = Drain Current +25C.
  • . +100C . . . . . . (V. . G. S. =.

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Datasheet Details

Part number NTE2993
Manufacturer NTE
File Size 65.11 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2993 Datasheet
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Full PDF Text Transcription

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NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3 Type Package D Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling G S Absolute Maximum Ratings: Drain−Source Voltage (VGS = 0V, ID = 1mA), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Continuous TTCC = = Drain Current +25C . . . . . . +100C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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