BLF6G10LS-135R datasheet by NXP Semiconductors.
| Part number | BLF6G10LS-135R |
|---|---|
| Datasheet | BLF6G10LS-135R_NXPSemiconductors.pdf |
| File Size | 134.06 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS transistor |
|
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135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 26.5 Gp (dB) 21.0 ηD (%) 28.0 ACPR (dBc) −39[1] Test signal:.
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