| Part number | BLF6G10LS-135R |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 134.06 KB |
| Description | Power LDMOS transistor |
| Datasheet | BLF6G10LS-135R_NXPSemiconductors.pdf |
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.. BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 26.5 Gp (dB) 21.0 ηD (%) 28.0 ACPR (dBc)...
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