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BLF6G10L-40BRN Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: DataSheet.in BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1.

General Description

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Key Features

  • Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: ‹ Average output power (PL(AV)) = 2.5 W ‹ Power gain (Gp) = 23.0 dB ‹ Drain efficiency (ηD) = 15.0 % ‹ ACPR =.
  • 42.5 dBc.
  • Easy power control.
  • Integrated ESD protection.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (728 MHz to 960 MHz).
  • Intern.

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