BLF6G10L-40BRN Description
40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.5 Gp (dB) 23.0 ηD (%) 15.0 ACPR (dBc) −42.5 Test signal:.
BLF6G10L-40BRN Key Features
- Easy power control
- Integrated ESD protection
- Enhanced ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (728 MHz to 960 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
- Integrated current sense