BLF6G10L-40BRN - Power LDMOS transistor

Product Overview

NXP Semiconductors

Part number	BLF6G10L-40BRN
Manufacturer	NXP Semiconductors
File Size	327.49 KB
Description	Power LDMOS transistor
Datasheet	BLF6G10L-40BRN Datasheet
Additional preview pages of the BLF6G10L-40BRN datasheet.

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR =.
42.5 dBc.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (728 MHz to 960 MHz).
Intern.

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Published: Oct 23, 2010 |