2N7002CK Datasheet | NXP Semiconductors

60 V, 0.3 A N-channel Trench MOSFET Rev. 01 - 11 September 2009 .. Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features I I I I Logic-level patible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol VDS ID IDM RDSon Quick reference data Parameter drain-source voltage drain current peak drain current...