BF1107 datasheet by NXP Semiconductors.
| Part number | BF1107 |
|---|---|
| Datasheet | BF1107_PhilipsSemiconductors.pdf |
| File Size | 54.54 KB |
| Manufacturer | NXP Semiconductors |
| Description | N-channel single gate MOS-FETs |
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The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BF1107W | N-channel single gate MOS-FETs |
| BF1100 | Dual-gate MOS-FETs |
| BF1100R | Dual-gate MOS-FETs |
| BF1100WR | Dual-gate MOS-FET |
| BF1101 | N-channel dual-gate MOS-FETs |
| BF1101R | N-channel dual-gate MOS-FETs |
| BF1101WR | N-channel dual-gate MOS-FETs |
| BF1102 | Dual N-channel dual gate MOS-FET |
| BF1105 | N-channel dual-gate MOS-FETs |
| BF1105R | N-channel dual-gate MOS-FETs |
