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BF1107W - N-channel single gate MOS-FETs

Description

The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively.

The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions.

Features

  • Currentless RF switch.

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Datasheet preview – BF1107W

Datasheet Details

Part number BF1107W
Manufacturer NXP
File Size 54.54 KB
Description N-channel single gate MOS-FETs
Datasheet download datasheet BF1107W Datasheet
Additional preview pages of the BF1107W datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BF1107; BF1107W N-channel single gate MOS-FETs Product specification Supersedes data of 1998 Jun 22 1999 May 14 Philips Semiconductors Product specification N-channel single gate MOS-FETs FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner - Transceiver switching. DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable.
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