Datasheet Details
| Part number | BF1108 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 64.71 KB |
| Description | Silicon RF switches |
| Datasheet | BF1108_PhilipsSemiconductors.pdf |
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Overview: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile CAUTION 1.
| Part number | BF1108 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 64.71 KB |
| Description | Silicon RF switches |
| Datasheet | BF1108_PhilipsSemiconductors.pdf |
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These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these devices provide excellent RF switching functions.
The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses.
| Part Number | Description |
|---|---|
| BF1108R | Silicon RF switches |
| BF1100 | Dual-gate MOS-FETs |
| BF1100R | Dual-gate MOS-FETs |
| BF1100WR | Dual-gate MOS-FET |
| BF1101 | N-channel dual-gate MOS-FETs |
| BF1101R | N-channel dual-gate MOS-FETs |
| BF1101WR | N-channel dual-gate MOS-FETs |
| BF1102 | Dual N-channel dual gate MOS-FET |
| BF1105 | N-channel dual-gate MOS-FETs |
| BF1105R | N-channel dual-gate MOS-FETs |