BF1108R datasheet by NXP Semiconductors.
| Part number | BF1108R |
|---|---|
| Datasheet | BF1108R_PhilipsSemiconductors.pdf |
| File Size | 64.71 KB |
| Manufacturer | NXP Semiconductors |
| Description | Silicon RF switches |
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These switches are a bination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BF1108 | Silicon RF switches |
| BF1100 | Dual-gate MOS-FETs |
| BF1100R | Dual-gate MOS-FETs |
| BF1100WR | Dual-gate MOS-FET |
| BF1101 | N-channel dual-gate MOS-FETs |
| BF1101R | N-channel dual-gate MOS-FETs |
| BF1101WR | N-channel dual-gate MOS-FETs |
| BF1102 | Dual N-channel dual gate MOS-FET |
| BF1105 | N-channel dual-gate MOS-FETs |
| BF1105R | N-channel dual-gate MOS-FETs |
