BF1109 Datasheet N-channel dual-gate MOS-FETs

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product speciﬁcation Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors.

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BF1109 n-channel dual-gate mos-fets by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BF1109
Manufacturer	NXP Semiconductors
File Size	145.41 KB
Description	N-channel dual-gate MOS-FETs
Download	BF1109 Download (PDF)

General Description

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1109R marking code: NBp.

Fig.2 Simplified outline (SOT143R).

fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

Key Features

Short channel transistor with high forward transfer admittance to input capacitance ratio.
Low noise gain controlled amplifier up to 1 GHz.
Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

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More Datasheets from NXP Semiconductors

Part Number	Description
BF1109R	N-channel dual-gate MOS-FETs
BF1109WR	N-channel dual-gate MOS-FETs
BF1100	Dual-gate MOS-FETs
BF1100R	Dual-gate MOS-FETs
BF1100WR	Dual-gate MOS-FET
BF1101	N-channel dual-gate MOS-FETs
BF1101R	N-channel dual-gate MOS-FETs
BF1101WR	N-channel dual-gate MOS-FETs
BF1102	Dual N-channel dual gate MOS-FET
BF1105	N-channel dual-gate MOS-FETs