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BF1109

BF1109 is N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors.
BF1109 datasheet preview

BF1109 Datasheet

Part number BF1109
Datasheet BF1109 Datasheet PDF (Download)
File Size 145.41 KB
Manufacturer NXP Semiconductors
Description N-channel dual-gate MOS-FETs
BF1109 page 2 BF1109 page 3

BF1109 Overview

source drain gate 2 gate 1 Top view MSB035 handbook, 2 columns 3 4 2 1 BF1109R marking code: Fig.2 Simplified outline (SOT143R). fpage 3 4 DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected.

BF1109 Key Features

  • Short channel transistor with high forward transfer admittance to input capacitance ratio
  • Low noise gain controlled amplifier up to 1 GHz
  • Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization

BF1109 Applications

  • VHF and UHF applications with 9 V supply voltage, such as television tuners and professional munications equipment

Related Datasheets

Part Number Description Manufacturer
BF1109R N-channel dual-gate MOS-FETs NXP
BF1109WR N-channel dual-gate MOS-FETs NXP
BF1100 Dual-gate MOS-FETs NXP

BF1109 Distributor

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