BF1109WR Overview
Key Specifications
Mount Type: Surface Mount
Max Frequency: 1 GHz
Height: 1 mm
Length: 3 mm
Description
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges.
Key Features
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1 GHz
- Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS
