Part BF1203
Description Dual N-channel dual gate MOS-FET
Category MOSFET
Manufacturer NXP Semiconductors
Size 166.54 KB
NXP Semiconductors
BF1203

Overview

The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected.

  • Two low noise gain controlled amplifiers in a single package
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio. APPLICATIONS
  • Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment. handbook, halfpage BF1203