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BF1203 Datasheet

Manufacturer: NXP Semiconductors
BF1203 datasheet preview

Datasheet Details

Part number BF1203
Datasheet BF1203_PhilipsSemiconductors.pdf
File Size 166.54 KB
Manufacturer NXP Semiconductors
Description Dual N-channel dual gate MOS-FET
BF1203 page 2 BF1203 page 3

BF1203 Overview

g1 (b) 4 s d (b) 6 5 DESCRIPTION The BF1203 is a bination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.

BF1203 Key Features

  • Two low noise gain controlled amplifiers in a single package
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio

BF1203 Applications

  • Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional mu
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More Datasheets from NXP Semiconductors

See all NXP Semiconductors datasheets

Part Number Description
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201R N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202R N-channel dual-gate PoLo MOS-FETs
BF1202WR N-channel dual-gate PoLo MOS-FETs
BF1204 Dual N-channel dual gate MOS-FET
BF1205 Dual N-channel dual gate MOS-FET
BF1205C Dual N-channel dual gate MOS-FET
BF1206 Dual N-channel dual-gate MOS-FET

BF1203 Distributor

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