Datasheet4U Logo Datasheet4U.com

BF1203 - Dual N-channel dual gate MOS-FET

General Description

DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads.

The source and substrate are interconnected.

Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.

Key Features

  • Two low noise gain controlled amplifiers in a single package.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES • Two low noise gain controlled amplifiers in a single package • Superior cross-modulation performance during AGC • High forward transfer admittance • High forward transfer admittance to input capacitance ratio. APPLICATIONS • Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.