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BF1205C Datasheet

Manufacturer: NXP Semiconductors
BF1205C datasheet preview

Datasheet Details

Part number BF1205C
Datasheet BF1205C_PhilipsSemiconductors.pdf
File Size 288.93 KB
Manufacturer NXP Semiconductors
Description Dual N-channel dual gate MOS-FET
BF1205C page 2 BF1205C page 3

BF1205C Overview

The BF1205C is a bination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected.

BF1205C Key Features

  • Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly int
  • Internal switch to save external ponents
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance ratio

BF1205C Applications

  • Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage  digital and analog television tuners  professional munication equip
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More Datasheets from NXP Semiconductors

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Part Number Description
BF1205 Dual N-channel dual gate MOS-FET
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201R N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202R N-channel dual-gate PoLo MOS-FETs
BF1202WR N-channel dual-gate PoLo MOS-FETs
BF1203 Dual N-channel dual gate MOS-FET
BF1204 Dual N-channel dual gate MOS-FET
BF1206 Dual N-channel dual-gate MOS-FET

BF1205C Distributor

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