BF1205C Datasheet Dual N-channel dual gate MOS-FET

Manufacturer: NXP Semiconductors

Datasheet Details

Part number	BF1205C
Manufacturer	NXP Semiconductors
File Size	288.93 KB
Description	Dual N-channel dual gate MOS-FET
Datasheet	BF1205C Datasheet

The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch.

The integrated switch is operated by the gate 1 bias of amplifier b.

The source and substrate are interconnected.

BF1205C Dual N-channel dual gate MOS-FET Rev.

3 — 7 September 2011 Product data sheet 1.

Product profile CAUTION 1.

Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias.
Internal switch to save external components.
Superior cross-modulation performance during AGC.
High forward transfer admittance.
High forward transfer admittance to input capacitance ratio. 1.3.

Part Number	Description
BF1205	Dual N-channel dual gate MOS-FET
BF1201	N-channel dual-gate PoLo MOS-FETs
BF1201R	N-channel dual-gate PoLo MOS-FETs
BF1201WR	N-channel dual-gate PoLo MOS-FETs
BF1202	N-channel dual-gate PoLo MOS-FETs
BF1202R	N-channel dual-gate PoLo MOS-FETs
BF1202WR	N-channel dual-gate PoLo MOS-FETs
BF1203	Dual N-channel dual gate MOS-FET
BF1204	Dual N-channel dual gate MOS-FET
BF1206	Dual N-channel dual-gate MOS-FET