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BF1205C - Dual N-channel dual gate MOS-FET

Description

The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch.

The integrated switch is operated by the gate 1 bias of amplifier b.

The source and substrate are interconnected.

Features

  • Two low noise gain controlled amplifiers in a single package; one with a fully integrated bias and one with a partly integrated bias.
  • Internal switch to save external components.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio. 1.3.

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Datasheet Details

Part number BF1205C
Manufacturer NXP
File Size 288.93 KB
Description Dual N-channel dual gate MOS-FET
Datasheet download datasheet BF1205C Datasheet
Additional preview pages of the BF1205C datasheet.

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Full PDF Text Transcription

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BF1205C Dual N-channel dual gate MOS-FET Rev. 3 — 7 September 2011 Product data sheet 1. Product profile CAUTION 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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