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BF1206 Datasheet

Manufacturer: NXP Semiconductors
BF1206 datasheet preview

Datasheet Details

Part number BF1206
Datasheet BF1206_PhilipsSemiconductors.pdf
File Size 628.30 KB
Manufacturer NXP Semiconductors
Description Dual N-channel dual-gate MOS-FET
BF1206 page 2 BF1206 page 3

BF1206 Overview

The BF1206 is a bination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC.

BF1206 Key Features

  • Two low noise gain controlled amplifiers in a single package
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance
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More Datasheets from NXP Semiconductors

See all NXP Semiconductors datasheets

Part Number Description
BF1206F Dual N-channel dual gate MOSFET
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201R N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202R N-channel dual-gate PoLo MOS-FETs
BF1202WR N-channel dual-gate PoLo MOS-FETs
BF1203 Dual N-channel dual gate MOS-FET
BF1204 Dual N-channel dual gate MOS-FET
BF1205 Dual N-channel dual gate MOS-FET

BF1206 Distributor

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