Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET handbook, halfpage
MBD128
BF1205 Dual N-channel dual gate MOS-FET
Product specification
2003 Sep 30
NXP Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
Features
- Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias
- Internal switch reduces the number of external ponents
- Superior cross-modulation performance during AGC
- High forward transfer admittance
- High forward transfer admittance to input capacitance ratio.
PINNING
- SOT363
DESCRIPTION
1 gate 1 (a)
2 gate 2
3 gate 1 (b)
4 drain (b)
5 source
6 drain...