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BF1205 Datasheet Dual N-channel dual gate MOS-FET

Manufacturer: NXP Semiconductors

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General Description

1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) APPLICATIONS  Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional communications equipment.

DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch.

The integrated switch is operated by the gate 1 bias of amplifier b.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Dual N-channel dual gate MOS-FET Product.

Key Features

  • Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias.
  • Internal switch reduces the number of external components.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio.

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