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BF1205 Datasheet

Manufacturer: NXP Semiconductors
BF1205 datasheet preview

Datasheet Details

Part number BF1205
Datasheet BF1205_PhilipsSemiconductors.pdf
File Size 626.42 KB
Manufacturer NXP Semiconductors
Description Dual N-channel dual gate MOS-FET
BF1205 page 2 BF1205 page 3

BF1205 Overview

1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) APPLICATIONS  Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage, such as digital and analog television tuners and professional munications equipment. DESCRIPTION The BF1205 is a bination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated...

BF1205 Key Features

  • Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly int
  • Internal switch reduces the number of external ponents
  • Superior cross-modulation performance during AGC
  • High forward transfer admittance
  • High forward transfer admittance to input capacitance
  • SOT363
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More Datasheets from NXP Semiconductors

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Part Number Description
BF1205C Dual N-channel dual gate MOS-FET
BF1201 N-channel dual-gate PoLo MOS-FETs
BF1201R N-channel dual-gate PoLo MOS-FETs
BF1201WR N-channel dual-gate PoLo MOS-FETs
BF1202 N-channel dual-gate PoLo MOS-FETs
BF1202R N-channel dual-gate PoLo MOS-FETs
BF1202WR N-channel dual-gate PoLo MOS-FETs
BF1203 Dual N-channel dual gate MOS-FET
BF1204 Dual N-channel dual gate MOS-FET
BF1206 Dual N-channel dual-gate MOS-FET

BF1205 Distributor

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