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BF1204 - Dual N-channel dual gate MOS-FET

General Description

The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads.

The source and substrate are interconnected.

Key Features

  • Two low noise gain controlled amplifiers in a single package.
  • Superior cross-modulation performance during AGC.
  • High forward transfer admittance.
  • High forward transfer admittance to input capacitance ratio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Dual N-channel dual gate MOS-FET Product specification BF1204 FEATURES  Two low noise gain controlled amplifiers in a single package  Superior cross-modulation performance during AGC  High forward transfer admittance  High forward transfer admittance to input capacitance ratio. APPLICATIONS  Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.