BF623 Datasheet | NXP Semiconductors

FEATURES - Low current (max. 50 m A) - High voltage (max. 300 V). APPLICATIONS - Video output stages. DESCRIPTION PNP high-voltage transistor in a SOT89 plastic package. NPN plements: BF620 and BF622. MARKING TYPE NUMBER BF621 BF623 MARKING CODE DF DB 1 Bottom view 2 3 BF621; BF623 PINNING PIN 1 2 3 emitter collector base DESCRIPTION handbook, halfpage 2 3 1 MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF621 BF623 VCEO collector-emitter voltage BF621 BF623 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - 65 - - 65 - 300 - 250 - 5 - 50 - 100 - 50 1.25 +150 150 +150 V V V m A m A m A W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - - 300 - 250 V V MIN. MAX. UNIT 1999 Apr 21 Philips Semiconductors Product specification PNP high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 BF621; BF623 VALUE 100 20 UNIT K/W K/W 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE VCEsat Cre f T PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage feedback...