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BFG591 - NPN 7 GHz wideband transistor

General Description

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package.

Fig.1 SOT223.

QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM s 21 Note 1.

Key Features

  • High power gain.
  • Low noise figure.
  • High transition frequency.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 04 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. PINNING PIN 1 2 3 4 base emitter collector DESCRIPTION emitter 1 Top view BFG591 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. fpage 4 2 3 MSB002 - 1 Fig.1 SOT223.