NXP Semiconductors BFG591
NPN 7 GHz wideband transistor
| Part No. | BFG591 |
|---|---|
| Datasheet | BFG591 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 7 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● Low noise figure
● High transition frequency
● Gold metallization ensures excellent reliability.
APPLICATIONS
Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment. PINNING PIN 1 2 3 4 base emitter collectorDESCRIPTION
emitter 1 Top view BFG591DESCRIPTION
NPN silicon planar epitaxial transistor in a plastic, 4-pin SOT223 package. fpage 4 2 3 MSB002 - 1 Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM s 21 Note 1. Ts is the temperature at the soldering point of the collector pin. 2 PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain open base CONDITIONS open emitter − − − up to Ts = 80 °C; note 1 IC = 70 mA; VCE = 8 V IC = Ic = 0; VCE = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 °C − MIN. − − − − TYP.
