BLF277 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor Features - High power gain - Easy power control - Gold metallization ensures excellent reliability - Good thermal stability - Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the ‘General' section for further information. PINNING - SOT119 PIN 1 2 3 4 5 6 DESCRIPTION source source gate drain source source WARNING Product and environmental safety - toxic materials andbook, halfpage PIN CONFIGURATION 2 d 4 g MBB072 s MSB006 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 50 PL (W) 150 Gp (d B) > 14 ηD (%) > 50 September 1992 Philips Semiconductors Product specification VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source...