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BLF277 - VHF power MOS transistor

Datasheet Summary

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • High power gain.
  • Easy power control.
  • Gold metallization ensures excellent reliability.
  • Good thermal stability.
  • Withstands full load mismatch.

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Datasheet Details

Part number BLF277
Manufacturer NXP
File Size 101.84 KB
Description VHF power MOS transistor
Datasheet download datasheet BLF277 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET BLF277 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization ensures excellent reliability • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 6-lead, SOT119 flange envelope, with a ceramic cap. All leads are isolated from the flange. Fig.1 Simplified outline and symbol. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications.
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