BLF202 Description
Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a mon source test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 12.5 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
BLF202 Key Features
- High power gain
- Easy power control
- Gold metallization
- Good thermal stability
- Withstands full load mismatch