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BLF202 - HF/VHF power MOS transistor

General Description

Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap.

Fig.1 Simplified outline.

Key Features

  • High power gain.
  • Easy power control.
  • Gold metallization.
  • Good thermal stability.
  • Withstands full load mismatch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF202 HF/VHF power MOS transistor Product specification 1999 Oct 20 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. handbook, halfpage BLF202 PINNING - SOT409A PIN 1, 8 2, 3 4, 5 6, 7 source gate source drain DESCRIPTION 8 5 1 Top view 4 MBK150 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit.