BLF278 Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the mon source connection for the transistors. CAUTION The device is supplied in an antistatic package.
BLF278 Key Features
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability