BLF278 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLF278 VHF push-pull power MOS transistor Product Specification Supersedes data of October 1992 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor Features - High power gain - Easy power control - Good thermal stability - Gold metallization ensures excellent reliability. APPLICATIONS - Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the mon source connection for the transistors. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. 1 2 PINNING - SOT262A1 PIN 1 2 3 4 5 SYMBOL d1 d2 g1 g2 s DESCRIPTION drain 1 drain 2 gate 1 gate 2 source d g s g 5 3 Top view 5 4 MAM098 d Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull mon source test circuit. MODE OF OPERATION CW, class-B CW, class-C CW, class-AB f (MHz) 108 108 225 VDS (V) 50 50 50 PL (W) 300 300 250 Gp (d B) >20 typ. 18 >14 typ. 16 ηD (%) >60 typ. 80 >50 typ. 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 21 Philips Semiconductors Product Specification VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL Per transistor section VDS VGS ID Ptot Tstg Tj drain-source...