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BLT13 - UHF power transistor

General Description

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package.

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit.

Key Features

  • High efficiency.
  • High gain.
  • Internal pre-matched input.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT13 UHF power transistor Preliminary specification File under Discrete Semiconductors, SC08b 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor FEATURES • High efficiency • High gain • Internal pre-matched input. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for 1.8 GHz Time Division Multiple Access (TDMA) communication systems. PINNING - SOT96-1 PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base emitter collector DESCRIPTION 1 4 MAM227 handbook, halfpage 8 BLT13 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. 5 c b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit.