BLT13 Description
1 4 MAM227 handbook, halfpage 8 BLT13 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. 5 c b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit.
BLT13 Key Features
- High efficiency
- High gain
- Internal pre-matched input
BLT13 Applications
- Hand-held radio equipment in mon emitter class-AB operation for 1.8 GHz Time Division Multiple Access (TDMA) munication systems. PINNING