BLT13 Datasheet | NXP Semiconductors

FEATURES - High efficiency - High gain - Internal pre-matched input. APPLICATIONS - Hand-held radio equipment in mon emitter class-AB operation for 1.8 GHz Time Division Multiple Access (TDMA) munication systems. PINNING - SOT96-1 PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base emitter collector DESCRIPTION 1 4 MAM227 handbook, halfpage 8 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. 5 c b e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit. MODE OF OPERATION Pulsed, class-AB f (MHz) 1800 VCE (V) 6 PL (W) 2 Gp (d B) ≥6 ηC (%) ≥50 1996 Apr 12 Philips Semiconductors Preliminary specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 130 °C; note 1 open base open collector CONDITIONS open emitter - - - - - - 65 - MIN. MAX. 20 10 2.5 1 1 +150 175 UNIT V V V A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 1 W; Ts = 130 °C; note 1 VALUE 45 UNIT K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES h FE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 5 m A open base; IC = 10 m A open collector; IE = 1 m A VCE = 6 V; VBE = 0 VCE = 5 V; IC = 100 m A VCB = 6 V; IE = ie = 0; f = 1 MHz VCE = 6 V; IC = 0; f = 1 MHz MIN. 20 10 2.5 - 30 -...