BLT53 Datasheet | NXP Semiconductors

FEATURES - Emitter-ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability - Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for mon emitter, class-B operation in portable radio transmitters in the 470 MHz munications band. All leads are isolated from the mounting flange. PINNING - SOT122D PIN 1 2 3 4 DESCRIPTION collector emitter base emitter 1 handbook, halfpage halfpage QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a mon emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 470 7.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. VCE (V) 8 PL (W) Gp (d B) > 6 ηc (%) > 60 PIN CONFIGURATION 4 c 3 b MBB012 e MSB055 Fig.1 Simplified outline and symbol. May 1991 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz RF operation; Tmb = 25 °C - - - - - - - 65 - MIN. MAX. 20 10 3 2.5 7.5 35.5 150 200 UNIT V V V A A W °C °C handbook, halfpage MCD192 handbook, halfpage MCD193 IC (A) Ptot (W) 40 Tmb = 25 o C 70 o...