BLT61 Description
NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1(SO8) package. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 3.6 PL (W) 1.2 Gp (dB) ≥10 typ.
BLT61 Key Features
- High efficiency
- High gain
- Internal pre-matched input
- Low supply voltage