BLT61 Datasheet | NXP Semiconductors

FEATURES - High efficiency - High gain - Internal pre-matched input - Low supply voltage. APPLICATIONS - Hand-held radio equipment in mon emitter class-AB operation for 900 MHz munication systems. DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1(SO8) package. k, halfpage PINNING PIN 1, 8 2, 4, 5, 7 3, 6 base emitter collector DESCRIPTION 1 Top view MBK187 Fig.1 Simplified outline (SOT96-1; SO8). QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 3.6 PL (W) 1.2 Gp (d B) ≥10 typ. 11.5 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature operating junction temperature Ts = 60 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - 65 - MIN. 7 3 0.8 4 +150 175 MAX. 14 V V V A W °C °C UNIT ηC (%) ≥50 typ. 63 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES h FE Cc Cre PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 5 m A open collector; IE = 1 m A VBE = 0; VCE = 5 V IC = 0.2 A; VCE = 5 V IC = 0; VCE = 3.6 V; f = 1 MHz 7 3 - 45 - MIN. 14 - - - 0.01 130 tbf tbf MAX. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 4 W; Ts = 60 °C; note 1 MAX. 29 UNIT K/W UNIT V V V m A p F p F collector-emitter breakdown voltage open base; IC = 10 m...