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BLT50 - UHF power transistor

General Description

NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band.

Key Features

  • SMD encapsulation.
  • Gold metallization ensures excellent reliability.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BLT50 UHF power transistor Product specification April 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. PINNING - SOT223 BLT50 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION age f (MHz) VCE (V) 470 7.5 PL (W) 1.