Datasheet4U Logo Datasheet4U.com

BLT52 - UHF power transistor

General Description

DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package.

Fig.1 Simplified outline SOT409A.

QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit.

Key Features

  • Emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLT62 UHF power transistor Philips

Other Datasheets by NXP Semiconductors

Part Number Description
BLT50 UHF power transistor
BLT53 UHF power transistor
BLT11 NPN 2 Ghz RF Power Transistor
BLT13 UHF power transistor
BLT61 UHF power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLT52 UHF power transistor Product specification Supersedes data of 1997 Oct 15 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-B operation in portable radio transmitters in the 470 MHz communication band. handbook, halfpage BLT52 PINNING PIN 1, 4, 5, 8 2, 3 6, 7 emitter base collector DESCRIPTION 8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit.