BLT52 Description
8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a mon emitter test circuit.
BLT52 Key Features
- Emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability
BLT52 Applications
- mon emitter class-B operation in portable radio transmitters in the 470 MHz munication band