BLT52 Datasheet | NXP Semiconductors

FEATURES - Emitter ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. APPLICATIONS - mon emitter class-B operation in portable radio transmitters in the 470 MHz munication band. handbook, halfpage PINNING PIN 1, 4, 5, 8 2, 3 6, 7 emitter base collector DESCRIPTION DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a mon emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) 7.5 CW, class-B 470 6 3 PL (W) 7 Gp (d B) ≥8 typ. 9.5 ≥8 typ. 9.5 ηC (%) ≥50 typ. 65 ≥50 typ. 55 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb ≤ 60 °C CONDITIONS open emitter open base open collector - - - - - - 65 - MIN. MAX. 20 10 3 2.5 13 +150 200 UNIT V V V A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Ptot = 13 W; Tmb ≤ 60 °C VALUE 8 UNIT K/W MGM485 handbook, halfpage IC (A) 10- 1 1 10 VCE (V) 102 Tmb = 60 °C. Fig.2 DC SOAR. 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES h FE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 20 m A open base; IC = 40 m A open collector; IE = 4 m A VBE = 0; VCE = 7.5 V IC = 1.2 A; VCE = 5 V IE = ie =...