BLT70 Datasheet | NXP Semiconductors

FEATURES - Very high efficiency - Low supply voltage. handbook, halfpage APPLICATIONS - Hand-held radio equipment in mon emitter class-AB operation in the 900 MHz munication band. 4 c b DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. PINNING - SOT223H PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol. DESCRIPTION emitter e 1 Top view MAM043 - 1 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 4.8 PL (m W) 600 Gp (d B) ≥6 ηC (%) ≥60 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 60 °C; note 1 open base open collector CONDITIONS open emitter - - - - - - 65 - MIN. 8 2.5 250 2.1 +150 175 MAX. 16 UNIT V V V m A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 2.1 W; Ts = 60 °C; note 1 VALUE 55 UNIT K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. MGD197 handbook, halfpage Ptot (W) 0 0 100 Ts (o C) 200 Fig.2 DC SOAR. 1996 Feb 06 Philips Semiconductors Product specification UHF power...