BLT71 Datasheet | NXP Semiconductors

FEATURES - High efficiency - Very high gain - Internal pre-matched input - Low supply voltage. APPLICATIONS - Hand-held radio equipment in mon emitter class-AB operation for the 900 MHz munication band. DESCRIPTION 1 4 MBK187 BLT71/8 PINNING - SOT96-1 PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base emitter collector DESCRIPTION handbook, halfpage NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1 (SO8) plastic SMD package. Top view Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 4.8 PL (W) 1.2 Gp (d B) ≥11 typ. 13 ηC (%) ≥55 typ. 63 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 60 °C; VCE ≤ 6.5 V; note 1 CONDITIONS open emitter open base open collector - - - - - - 65 - MIN. 8 2.5 500 2.9 +150 175 MAX. 16 V V V m A W °C °C UNIT 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES h FE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 0.5 m A open base; IC = 10 m A open collector; IE = 0.1 m A VCE = 8 V; VBE = 0 VCE = 5 V; IC = 100 m A VCB = 4.8 V; IE = ie = 0; f = 1 MHz VCE = 4.8 V; IC = 0; f = 1 MHz 8 2.5 - 25 - - MIN. 16 - - - 0.1 - 7 5 PARAMETER thermal resistance from junction to soldering point...