BLT80 Description
NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-B narrow band f (MHz) 900 VCE (V) 7.5 PL (W) 0.8 Gp (dB) ≥6 ηC (%) ≥60 1996 May 09 2 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Rating System (IEC 134).
BLT80 Key Features
- SMD encapsulation
- Gold metallization ensures excellent reliability
BLT80 Applications
- Hand-held radio equipment in the 900 MHz munication band