BLT80 Datasheet | NXP Semiconductors

FEATURES - SMD encapsulation - Gold metallization ensures excellent reliability. APPLICATIONS - Hand-held radio equipment in the 900 MHz munication band. b handbook, halfpage 4 c DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 2 3 e MAM043 - 1 PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector DESCRIPTION emitter Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-B narrow band f (MHz) 900 VCE (V) 7.5 PL (W) 0.8 Gp (d B) ≥6 ηC (%) ≥60 1996 May 09 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation storage temperature operating junction temperature f > 1 MHz Ts = 131 °C; note 1 open base open collector CONDITIONS open emitter - - - - - - - - 65 - MIN. MAX. 20 10 3 250 250 750 2 +150 175 UNIT V V V m A m A m A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS Ptot = 2 W; Ts = 131 °C; note 1 Ptot = 2 W; Tamb = 25 °C; note 2 VALUE 22 85 UNIT K/W K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 × 40 × 1 mm, collector pad 35 × 17 mm. handbook, halfpage MRA780 - 1 IC (A) 10- 1 10- 2 1 10 VCE (V) 102 Ts = 131 °C. Fig.2 DC SOAR. 1996 May 09 Philips...