BLT82 Description
NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. 5 c b e PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base DESCRIPTION emitter collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit (see Fig.5).
BLT82 Key Features
- High efficiency
- High gain
- Internal pre-matched input
BLT82 Applications
- Hand-held radio equipment in mon emitter class-AB operation for 900 MHz Time Division Multiple Axis (TDMA) munication systems. PINNING