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DISCRETE SEMICONDUCTORS
DATA SHEET
BLT82 UHF power transistor
Product specification 1996 Feb 05
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • High efficiency • High gain • Internal pre-matched input. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for 900 MHz Time Division Multiple Axis (TDMA) communication systems. PINNING - SOT96-1
1 4
MAM227 handbook, halfpage 8
BLT82
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package.
5 c b e
PIN 1, 8 2, 4, 5, 7 3, 6
SYMBOL b e c base
DESCRIPTION emitter collector
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.5).
BLT82 Datasheet
