BLT82 Datasheet | NXP Semiconductors

FEATURES - High efficiency - High gain - Internal pre-matched input. APPLICATIONS - Hand-held radio equipment in mon emitter class-AB operation for 900 MHz Time Division Multiple Axis (TDMA) munication systems. PINNING - SOT96-1 1 4 MAM227 handbook, halfpage 8 DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 (SO8) SMD package. 5 c b e PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base DESCRIPTION emitter collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit (see Fig.5). MODE OF OPERATION f (MHz) 900 VCE (V) 6 PL (W) 3.5 2.8 Gp (d B) ≥8 typ. 10 ≥9 ηC (%) ≥50 typ. 65 ≥57 Pulsed, class-AB 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 115 °C; note 1 open base open collector CONDITIONS open emitter - - - - - - 65 - MIN. MAX. 20 10 3.5 1 1.9 +150 175 UNIT V V V A W °C °C MGD207 handbook, halfpage IC (A) 10- 1 1 10 VCE (V) Ts = 115 °C. Fig.2 DC SOAR. 1996 Feb 05 Philips Semiconductors Product...