BLT81 Datasheet | NXP Semiconductors

FEATURES - SMD encapsulation - Gold metallization ensures excellent reliability. handbook, halfpage 4 c b APPLICATIONS - Hand-held radio equipment in the 900 MHz munication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. PINNING - SOT223 PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol. DESCRIPTION emitter e 1 Top view MAM043 - 1 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-B narrow band f (MHz) 900 VCE (V) 7.5 6 PL (W) 1.2 1.2 Gp (d B) ≥6 typ. 6.5 ηC (%) ≥60 typ. 77 1996 May 09 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Ts = 110 °C; note 1 open base open collector CONDITIONS open emitter - - - - - - - 65 - MIN. MAX. 20 9.5 2.5 500 500 2 +150 175 UNIT V V V m A m A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 2 W; Ts = 110 °C; note 1 VALUE 32 UNIT K/W Note to the “Limiting values” and “Thermal characteristics” 1. Ts is the temperature at the soldering point of the collector pin. handbook, halfpage MRC094 IC (A) 10- 1 VCE (V) Ts = 110 °C. Fig.2 DC SOAR. 1996 May...