BLT92 Datasheet | NXP Semiconductors

DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz munications band. This device has been designed specifically for class-B operation. PIN CONFIGURATION FEATURES - internal input matching capacitor for a high power gain - gold metallization ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. PINNING 1 = collector 2 = emitter 3 = base 4 = emitter Fig.1 Simplified outline, SOT122D. MSB055 BLT92/SL QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a mon-emitter class-B circuit MODE OF OPERATION CW (class-B) VCE (V) 7.5 f (MHz) 900 PL (W) 3.0 Gp (d B) > 7.0 ηC (%) > 50 handbook, halfpage PRODUCT SAFETY This device incorporates beryllium oxide (Be O), the dust of which is toxic. The device is entirely safe provided that the internal Be O disc is not damaged. May 1989 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current DC or average (peak value); f > 800 MHz Total power dissipation at Tamb < 120 °C; f > 800 MHz Storage temperature range Operating junction temperature THERMAL RESISTANCE Dissipation = 10 W; Tmb = 25 °C From junction to mounting base (f > 800 MHz) Rth j-mb(RF) max. Ptot Tstg Tj max. max. IC; IC(AV) ICM max. max. VCBO VCEO VEBO max. max. max. BLT92/SL 20 V 10 V 3.0 V 1.2 A 3.6 A 10 W 200 °C - 65 to +150 °C 6.0 K/W handbook, halfpage MDA297 Ptot (W) 16 (1) (2) 0 0 40 80 120 160 200 Tmb (°C) (1) Short-time RF operation during mismatch (f > 800 MHz). (2) Continuous RF operation (f > 800 MHz). Fig.2 Total power dissipation as a function of temperature. May 1989 Philips Semiconductors Product specification UHF power...