BLT94 Description
NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A package. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 7.5 PL (W) 6 Gp (dB) ≥8 typ.
BLT94 Key Features
- Emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability