BLU86 Datasheet | NXP Semiconductors

FEATURES - SMD encapsulation - Emitter-ballasting resistors for optimum temperature profile - Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 MHz munications band. PINNING - SOT223 PIN 1 2 3 4 DESCRIPTION emitter base emitter collector Top view MBB012 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a mon emitter class-B test circuit (see note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION f (MHz) 900 VCE (V) 12.5 PL (W) 1 Gp (d B) >7 ηc (%) > 55 halfpage 4 c handbook, halfpage b e MSB002 - 1 Fig.1 Simplified outline and symbol. September 1991 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value; f > 1 MHz f > 1 MHz; Ts = 129 °C (note 1) - - - - - - MIN. MAX. 32 16 3 200 600 2 UNIT V V V m A m A W Tstg Tj Note storage temperature range operating junction temperature - 65 - 150 175 °C °C 1. Ts = temperature at soldering point of collector tab. 3 10 handbook, halfpage MRA241 IC (m A) Ts = 129 o C 102 10 1 10 VCE (V) Fig.2 DC SOAR. THERMAL RESISTANCE SYMBOL Rth j-s(DC) PARAMETER from junction to soldering point CONDITIONS Ptot = 2 W; Ts = 129 °C 23 MAX. K/W...