BLU97 Datasheet | NXP Semiconductors

DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. FEATURES - multi-base structure and emitter-ballasting resistors for an optimum temperature profile. - gold metallization ensures excellent reliability. The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a mon-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 470 PL W 7 Gp d B > 8,5 PINNING - SOT122A. PIN 1 2 handbook, halfpage ηC % > 55 DESCRIPTION collector emitter base emitter 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. August 1986 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 52 °C f > 1 MHz; Tmb = 52 °C Storage temperature Operating junction temperature Ptot(d.c.) Ptot(r.f.) Tstg Tj max. max. max. IC ICM max. max. VCBO VCEO VEBO max. max. max. 36 V 16 V 3 V 1,2 A 3,6 A 17 W 22,5 W 200 °C - 65 to +150 °C handbook, halfpage MDA360 handbook, halfpage MDA361 Ptot (W) IC (A) 30 Tmb = 52 °C Th = 70 °C II 20 I 10- 1 VCE (V) 0 0 40 80 120 Th (°C) 160 Rth mb-h = 0,6 K/W. I Continuous operation II Continuous operation (f > 1 MHz). III Short-time operation during mismatch (f > 1...