BLV100 Description
NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for mon emitter, class-AB operation in radio transmitters for the 960 MHz munications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.
BLV100 Key Features
- Internal input matching to achieve high power gain
- Ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability