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BLV100 - UHF power transistor

General Description

NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band.

The transistor has a 6-lead flange envelope with a ceramic cap.

All leads are isolated from the flange.

Key Features

  • Internal input matching to achieve high power gain.
  • Ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability. 1 2 4 6 MBB012 BLV100 PIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. 1 2 4 6 MBB012 BLV100 PIN CONFIGURATION halfpage c handbook, halfpage DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.