BLV100 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor Features - Internal input matching to achieve high power gain - Ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. 1 2 4 6 MBB012 PIN CONFIGURATION halfpage c handbook, halfpage DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for mon emitter, class-AB operation in radio transmitters for the 960 MHz munications band. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter 3 5 b e Top view MBA931 - 1 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a mon emitter class-AB test circuit. MODE OF OPERATION c.w. class-AB f (MHz) 960 VCE (V) 24 PL (W) 8 GP (d B) >8 ηc (%) > 50 March 1993 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCESM VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-emitter voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature CONDITIONS peak value; VBE = 0 open base open collector DC or average value...