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BLV100 Datasheet Uhf Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power.

General Description

NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for mon emitter, class-AB operation in radio transmitters for the 960 MHz munications band.

The transistor has a 6-lead flange envelope with a ceramic cap.

All leads are isolated from the flange.

Key Features

  • Internal input matching to achieve high power gain.
  • Ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability. 1 2 4 6 MBB012 BLV100 PIN.

BLV100 Distributor