BLV103 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor Features - Internal matching for an optimum wideband capability and high gain - Emitter-ballasting resistors for optimum temperature profile - Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for mon emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base. PINNING - SOT171 k, halfpage QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION c.w. class-AB f (MHz) 960 VCE (V) 24 PL (W) 4 Gp (d B) > 11.5 ηC (%) > 45 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PIN CONFIGURATION PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter Top view 1 3 5 2 handbook, halfpage c 4 6 b MBB012 e MBA931 - 1 Fig.1 Simplified outline and symbol. March 1993 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC or average value Tmb = 25 °C - -...