BLV103 Description
NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. It is intended for mon emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band. All leads are isolated from the mounting base.
BLV103 Key Features
- Internal matching for an optimum wideband capability and high gain
- Emitter-ballasting resistors for optimum temperature profile
- Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a
- SOT171
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not da