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BLV103 Datasheet Uhf Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power.

General Description

NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap.

It is intended for mon emitter, class-AB operation in cellular radio base stations in the 960 MHz frequency band.

All leads are isolated from the mounting base.

Key Features

  • Internal matching for an optimum wideband capability and high gain.
  • Emitter-ballasting resistors for optimum temperature profile.
  • Gold metallization ensures excellent reliability.

BLV103 Distributor