BLV11 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV11 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized mon-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 13,5 12,5 f MHz 175 175 PL W 15 15 > Gp d B 8,0 > typ. typ. 7,5 η % 60 67 zi Ω 2,3 + j2,2 - YL m S 130 - j4,4 - PIN CONFIGURATION handbook, halfpage PINNING PIN 1 1 4 DESCRIPTION collector emitter base emitter 2 3 4 MSB057 Fig.1 Simplified outline, SOT123. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the Be O disc is not damaged. August 1986 Philips Semiconductors Product specification VHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature v CESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max. 36 V 18 V 4 V 3 A 8 A 36 W 200 °C - 65 to + 150 °C handbook, halfpage MGP261 handbook, halfpage MGP262 IC (A) 2.5 Prf (W)...