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BLV11 - VHF power transistor

General Description

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f.

and v.h.f.

transmitters with a nominal supply voltage of 13,5 V.

Key Features

  • art of the specification. LIFE.

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BLV10 VHF power transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV11 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. BLV11 QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. c.w. VCE V 13,5 12,5 f MHz 175 175 PL W 15 15 > Gp dB 8,0 > typ. typ.