Datasheet Details
| Part number | BLV12 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 72.07 KB |
| Description | VHF power transistor |
| Datasheet |
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NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.
It is designed for common emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V.
All leads are isolated from the mounting flange.
| Part number | BLV12 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 72.07 KB |
| Description | VHF power transistor |
| Datasheet |
|
|
|
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| Part Number | Description | Manufacturer |
|---|---|---|
| BLV108 | Vertical N-channel MOSFET | SHANGHAI BELLING |
| BLV1N60 | N-Channel Enhancement Mode Power MOSFET | BELLING |
| BLV1N60A | N-Channel Enhancement Mode Power MOSFET | BELLING |
| BLV297 | N-Channel Enhancement Mode Power MOSFET | BELLING |
| BLV2N60 | N-channel Enhancement Mode Power MOSFET | SHANGHAI BELLING |
| Part Number | Description |
|---|---|
| BLV10 | VHF power transistor |
| BLV100 | UHF power transistor |
| BLV103 | UHF power transistor |
| BLV11 | VHF power transistor |
| BLV193 | UHF power transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.