BLV12 Description
NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed for mon emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange.
BLV12 Key Features
- Emitter-ballasting resistors for an optimum temperature profile
- Excellent reliability
- Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flang
- SOT123 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not da