BLV12 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor Features - Emitter-ballasting resistors for an optimum temperature profile - Excellent reliability - Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed for mon emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange. PINNING - SOT123 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter handbook, halfpage QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a mon emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 175 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. VCE (V) 12.5 PL (W) 30 GP (d B) >9 ηC (%) > 60 PIN CONFIGURATION halfpage 4 c b MBB012 e MSB057 Fig.1 Simplified outline and symbol. September 1991 Philips Semiconductors Product specification VHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz RF operation; f > 1 MHz; Tmb = 25 °C - - - - - - MIN. MAX. 36 16 3 6 18 100 UNIT V V V A A W Tstg Tj storage temperature...