BLV193 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor Features - Emitter ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor intended for mon emitter class-A and class-AB operation in the 900 MHz munications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT171 1 2 4 6 MBB012 QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION c.w. class-AB c.w. class-A Note 1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz. PIN CONFIGURATION f (MHz) 900 900 VCE (V) 12.5 12 12 6 (PEP) PL (W) Gp (d B) ≥ 6.5 typ. 11 ηC (%) ≥ 50 - - typ. - 30 dim (d B) (note 1) halfpage c handbook, halfpage PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter 3 5 b e Top view MBA931 - 1 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. March 1993 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction temperature CONDITIONS open emitter open base open collector DC or average...