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BLV193 - UHF power transistor

General Description

NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band.

The transistor has a SOT171 flange envelope with a ceramic cap.

All leads are isolated from the mounting base.

Key Features

  • Emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT171 1 2 4 6 MBB012 BLV193 QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-AB c.w. class-A Note 1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz.