BLV193 Description
NPN silicon planar epitaxial transistor intended for mon emitter class-A and class-AB operation in the 900 MHz munications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base.
BLV193 Key Features
- Emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor intended for mon e
- SOT171