BLV194 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor Features - Emitter-ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor intended for mon emitter class-AB operation in the 900 MHz munications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT171 PIN 1 2 3 4 5 6 DESCRIPTION emitter emitter base collector emitter emitter WARNING Product and environmental safety - toxic materials Fig.1 Simplified outline and symbol. alfpage QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 12.5 PL (W) 16 Gp (d B) ≥7 ηC (%) ≥ 50 1 3 5 2 4 6 c handbook, halfpage b MBB012 e Top view MBA931 - 1 This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. January 1993 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCEO VCES VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-emitter voltage collector-emitter voltage emitter-base voltage DC collector current average collector current total power dissipation storage temperature junction temperature Tmb = 25 °C CONDITIONS open base base short-circuited open collector - - - - - - - 65 -...