BLV97CE Datasheet | NXP Semiconductors

FEATURES - Internal input matching to achieve high power gain - Ballasting resistors for an optimum temperature profile - Gold metallization ensures excellent reliability DESCRIPTION NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for mon emitter, class-AB operation in radio transmitters for the 960 MHz munications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a mon emitter class-AB circuit. MODE OF OPERATION c.w. class-AB PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e DESCRIPTION emitter emitter base collector emitter emitter Fig.1 Simplified outline and symbol. 1 Top view 3 5 MAM141 f (MHz) 960 VCE (V) 24 PL (W) 35 GP (d B) > 7 ηc (%) > 50 handbook, halfpage 6 c b e WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. March 1993 Philips Semiconductors Product specification UHF power transistor LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector base voltage collector emitter voltage emitter base voltage collector current collector current total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector DC or average peak value f > 1 MHz f > 1 MHz Tmb = 25 °C MIN. - - - - - - - 65 - BLV97CE MAX. 50 27 3.5 3 9 70 150 200 V V V A A W UNIT °C °C THERMAL RESISTANCE SYMBOL Rthj-mb Rth mb-h PARAMETER from junction to...