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BSH101 Datasheet N-channel Enhancement Mode Mos Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH101 N-channel enhancement mode MOS transistor Product speciÞcation Supersedes data of 1997 Nov 28 File under Discrete Semiconductors, SC13b 2000 Jul 19.

General Description

N-channel enhancement mode MOS transistor in a SOT23 SMD package.

1 Top view 2 MAM273 BSH101 PINNING - SOT23 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION handbook, halfpage 3 d g s Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETERS drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ;

Key Features

  • Very low threshold.
  • High-speed switching.
  • No secondary breakdown.
  • Direct interface to C-MOS, TTL etc.

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