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BSH104 - N-channel enhancement mode MOS transistor

General Description

N-channel enhancement mode MOS transistor in a SOT23 SMD package.

CAUTION The device is supplied in an antistatic package.

The gate-source input must be protected against static discharge during transport or handling.

Key Features

  • High-speed switching.
  • No secondary breakdown.
  • Direct interface to C-MOS, TTL, etc.
  • Very low threshold.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSH104 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Nov 26 Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor FEATURES • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. • Very low threshold. APPLICATIONS • ‘Glue-logic’: interface between logic blocks and/or periphery • Power management • DC to DC converters • General purpose switch • Battery powered applications. DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.